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Epitaxial Growth and Properties of Mg-Doped Gan Film Produced by Atmospheric Mocvd System With Three Layered Lammar Flow Gas Injection

Published online by Cambridge University Press:  10 February 2011

N. Akutsu ,
H. Tokunaga ,
I. Waki ,
A. Yamaguchi  and
K. Matsumoto
N. Akutsu
Affiliation:
Nippon Sanso Corporation, Tsukuba Laboratories, 10 Ohkubo, Tsukuba, Ibaraki 300–2611, Japan
H. Tokunaga
Affiliation:
Nippon Sanso Corporation, Tsukuba Laboratories, 10 Ohkubo, Tsukuba, Ibaraki 300–2611, Japan
I. Waki
Affiliation:
Nippon Sanso Corporation, Tsukuba Laboratories, 10 Ohkubo, Tsukuba, Ibaraki 300–2611, Japan
A. Yamaguchi
Affiliation:
Nippon Sanso Corporation, Electronic Business Division, 6–2, Kojima-Cho, Kawasaldku, Kawasaki-City, 210, Japan
K. Matsumoto
Affiliation:
Nippon Sanso Corporation, Tsukuba Laboratories, 10 Ohkubo, Tsukuba, Ibaraki 300–2611, Japan
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Abstract

Mg-doped GaN films with a variety of Mg concentrations were grown on sapphire (0001) by horizontal atmospheric metalorganic chemical vapor deposition (MOCVD) system with three layered laminar flow gas injection in an attempt to study the Mg doping effects on film quality. The increase of Mg concentration induced an increase of x-ray rocking curve full width at half maximum (FWHM) and degradation of surface morphology. Secondary ion mass spectroscopy (SIMS) analysis shows increase of Si and O, associated with Mg-doping concentration. Si and O concentrations of Mg-doped film are up to 5×1016cm−3 and 5×1017cm−3 at Mg concentration of 4.5×1019cm−3, respectively. Strong 380nm emission and weak 430nm emission were observed by photoluminescence (PL) measurement at room temperature for as-grown Mg-doped GaN films which shows p-type conductivity after thermal annealing. While, in highliy Mg-doped GaN films which do not show the p-type conduction after thermal annealing, 430nm and/or 450nm emission were dominating. The highest room temperature free hole concentration achieved was p=2.5× 1018cm−3 with mobility μp=l.9cm2/V s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 113
Copyright
Copyright © Materials Research Society 1998

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References

1. Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K and Sawaki, N., J. Cryst. Growth 98, 209 (1989)Google Scholar
2. Amano, H., Kito, M., Hiramatsu, K and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989)Google Scholar
3. Nakamura, S., Mukai, T., Senoh, M. and Iwasa, N., Jpn. J. Appl. Phys. 31, L139, (1992)Google Scholar
4. Tanaka, T., Watanabe, A., Amano, A, Kobayashi, Y., Akasaki, I., Yamazaki, S. and Koike, M., Appl. Phys. Lett. 67, 3387, (1994)Google Scholar
5. Amano, H., Kitoh, M., Hiramatsu, K ans Akasaki, I., J. Electrochem. Soc. 137, 1639, (1990)Google Scholar
6. Kim, W., Botchkarev, A. E., Salvador, A., Popovici, G., Tang, H. and Morkoc, H., L. Appl. Phys. 82,219, (1997)Google Scholar
7. Eckey, L., Gfug, U., Holst, J. and Hoffmann, A., in ‘The Second International Conference on Nitride Semiconductors”, Proceedings: 58(1997)Google Scholar
8. Uchida, K, Tokunaga, H., Inaishi, Y., Akutsu, N. and Matsumoto, K., Mat. Res. Soc. Symp. Proc. 449, 129, (1997)Google Scholar
9. Wu, S. Q., Masusaki, H., Ishihara, Y., Matsumoto, K, Kimishima, T., Morishita, J., Kuze, H. and Takeuchi, N., in ‘The Fifth International Symposium on semiconductor Manufacturing”, Proceedings:, 321 (1996)Google Scholar
10. Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarev, A., Morkoc, H. and Goldenberg, B., Appl. Phys. Lett. 68, 1883, (1996)Google Scholar
11. Chung, B. C. and Gershenzon, M., J. Appl. Phys. 72, 651, (1992)Google Scholar