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Epitaxial Ferroelectric Heterostructures of Isotropic Metallc Oxide (SrRuO3) and Pb(Zr0.52Ti0.48)O3

Published online by Cambridge University Press:  21 February 2011

C. B. Eom ,
R.B. Van Dover ,
Julia M. Phillips ,
R.M. Fleming ,
R.J. Cava ,
J.H. Marshall ,
D.J. Werder ,
C.H. Chen  and
D.K Fork
C. B. Eom
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R.B. Van Dover
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R.M. Fleming
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R.J. Cava
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.H. Marshall
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D.J. Werder
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C.H. Chen
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D.K Fork
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

We have fabricated epitaxial ferroelectric heterostructures of isotropic metallic oxide (SrRuO3) and ferroelectric thin films [SrRuO3/Pb(Zr0.52Ti0.48)O3 /SrRuO3] on (100) SrTiO3 and YSZ buffer layered Si substrates by 90° off-axis sputtering. These heterostructures have high crystalline quality and coherent interfaces as revealed by X-ray diffraction, Rutherford backscattering spectroscopy and cross-sectional transmission electron microscopy. The ferroelectric layers exhibit superior fatigue characteristics over 1010 cycles with large remnant polarization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 145
Copyright
Copyright © Materials Research Society 1993

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