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Enhancement of Thin-Film Adhesion by MeV-ION and keV Electron Bombardment

Published online by Cambridge University Press:  21 February 2011

T. A. Tombrello*
Affiliation:
Schlumberger-Doll Research, Old Quarry Road, Ridgefield, CT 06877–4108
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Abstract

Since the discovery in 1981 that the electronic excitation produced by MeV ions can enhance thin film adhesion to a substrate, there have been many investigations to determine the origin of the effect and to apply it to problems of technological interest. As we approach the seventh anniversary of its discovery, I shall use this opportunity to review our progress toward these goals. In general, we have discovered that although the electronic excitation provided by the incident beam is responsible for the improvement in adhesion, it is certain that there are quite a number of separate effects involved. These have been shown to include: surface cracking of the substrate; the breakup of contaminant or oxide layers on the substrate by the beam; and the relaxation of surface strain in the substrate. The recent use of a variety of new techniques seems to offer the hope that we are beginning to make progress in untangling these phenomena.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

1. Tombrello, T.A., Nucl. Instrum. Methods 230, 555 (1984).CrossRefGoogle Scholar
2/ Griffith, J.E., Qiu, Y., and Tombrello, T.A., Nucl. Instrum. Methods 198 607 (1982).CrossRefGoogle Scholar
3. Tombrello, T.A., Int. J. Mass Spec. Ion Phys. 51, 307 (1983).CrossRefGoogle Scholar
4. Tombrello, T.A., Mat. Res. Soc. Symp. Proc. 25, 173 (1984).CrossRefGoogle Scholar
5. Mitchell, I.V., Williams, J.S., Smith, P., and Elliman, R.G., Appl. Phys. Lett. 44, 193 (1984).CrossRefGoogle Scholar
6. Mendenhall, M.H., Ph. D.thesis, Calif. Inst. of Tech., 1983.Google Scholar
7. Headrick, R.L. and Seiberling, L.E., Appl. Phys. Lett. 45. 388 (1984).CrossRefGoogle Scholar
8. Tombrello, T.A., Nucl. Instrum. Meth. B24/25, 517 (1987).Google Scholar
9. Dallaporta, H. and Cros, A., Appl. Phys. Lett. 48, 1357 (1986).CrossRefGoogle Scholar
10. Sofield, C.J., Woods, C.J., Wild, C., Riviere, J.C., and Welch, L.S., Mat. Res. Soc. Symp. Proc. 25, 197 (1984).CrossRefGoogle Scholar
11. Carbucicchio, M., Valenti, A., Battaglin, G., Mazzoldi, P., and R. Dal Machio, Hyperfine Interactions 29, 1213 (1986).Google Scholar
12. Ingemarsson, P.A., Ericsson, T., Seidel, A. Gustavsson, Possnert, G., Sundqvist, B.U.R., and Wappling, R., in Proceedings of the 12th International Symposium of Hosei University: Application of Ion Beams in Materials Science (Tokyo, Sept. 2–4, 1987) in press.Google Scholar
13. Ingemarsson, P.A., Nieh, C.W., Sundqvist, B.U.R., and Tombrello, T.A., Mat. Res. Soc. Symp. Proc. (1988) next paper in this session, submitted.Google Scholar
14. Wie, C.R., Shi, C.R., Mendenhall, M.H., Livi, R.P., Vreeland, T. Jr., and Tombrello, T.A., Nucl. Instrum. Meth. B9. 20 (1985).CrossRefGoogle Scholar
15. Shi, C.R. and Tombrello, T.A., Rad. Effects (1988) in press.Google Scholar
16. Shi, C.R., Tan, M.Q., and Tombrello, T.A., J. Non-Crystalline Solids (1988) in press.Google Scholar
17. Livi, R.P., Paine, S., Wie, C.R., Mendenhall, M.H., Tang, J.Y., Vreeland, T. Jr., and Tombrello, T.A., Mat. Res. Soc. Symp. 27, 467 (1985).Google Scholar
18. Wie, C.R., Tang, J.Y., Tombrello, T.A., Grant, R.W., and Housley, R.M., J. Vac. TAIP (1988) in press.Google Scholar
19. Stokstad, R. G., Jacobs, P.M., Tserruya, I., Sapir, L., and Mamane, G., Nucl. Instrum. Meth. B 6, 465 (1986).Google Scholar
20. Wie, C.R., Tombrello, T.A., and Vreeland, T. Jr., Phys. Rev. B 33, 4083 (1986).Google Scholar
21. Tombrello, T.A., in Proceedings 9f the First National Conf. on Ion Beam Analysis (Fudan Univ., Shanghai, Nov. 11–16, 1985) in press.Google Scholar