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Enhancement of Long-Wavelength Photoluminescence Due to Heat-Treatment in Si-Doped GaAs
Published online by Cambridge University Press: 03 September 2012
Abstract
Highly officient radiative recombination even at room temperature was found at a wavelength of about 1.3 μm in heat-treated Si-doped GaAs. The range of Si concentrations and the condition of heat-treatment to yield this intense luminescence were determined. Excitation spectra of the PL lines suggest that such PL lines are related to pairs of Si-donor and Si- acceptor and such pairs combined with gallium vacancies.
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- Copyright © Materials Research Society 1992
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