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Enhancement of Crystallinity with Fluorinated Amorphous Silicon (a-Si:H;F) Film by XeCl Excimer Laser Annealing

Published online by Cambridge University Press:  15 February 2011

H. S. Choi ,
K. H. Jang ,
K. B. Kim  and
M. K. Han
H. S. Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
K. H. Jang
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
K. B. Kim
Affiliation:
Department of Metallurgical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
M. K. Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
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Abstract

The Effects of fluorine atoms on laser-induced crystallization have been studied. The defect states of hydrogenated amorphous silicon (a-Si:H) film, which are related to weak hydrogen bonds, were reduced by involving fluorine atoms, before laser annealing. In laser annealing, the crystallinity was also enhanced to 63 %, while that of a-Si:H was 45 % at the energy density of 300 mJ/cm2. It may be considered that the fluorine atoms reduce the hydrogen atoms cause to the degradation of film in laser annealing, and increase the heat capacity which results in promotion of crystallinity in melt-solid phase transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 99
Copyright
Copyright © Materials Research Society 1995

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References

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