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Enhanced thermoelectric properties of Al-doped ZnO thin films

Published online by Cambridge University Press:  21 August 2013

P. Mele
Affiliation:
Hiroshima University, Institute for Sustainable Sciences and Development, 739-8530 Higashi-Hiroshima, Japan,
S. Saini
Affiliation:
Hiroshima University, Institute for Sustainable Sciences and Development, 739-8530 Higashi-Hiroshima, Japan,
H. Abe
Affiliation:
Hiroshima University, Graduate School for Advanced Sciences of Matter, 739-8530 Higashi-Hiroshima, Japan,
H. Honda
Affiliation:
Hiroshima University, Graduate School for Advanced Sciences of Matter, 739-8530 Higashi-Hiroshima, Japan,
K. Matsumoto
Affiliation:
Kyushu Institute of Technology, Department of Material Science, 804-8550 Kitakyushu, Japan,
K. Miyazaki
Affiliation:
Kyushu Institute of Technology, Department of Mechanical Engineering, 804-8550 Kitakyushu, Japan,
H. Hagino
Affiliation:
Kyushu Institute of Technology, Department of Mechanical Engineering, 804-8550 Kitakyushu, Japan,
A. Ichinose
Affiliation:
CRIEPI, Electric Power Engineering Research Laboratory, 240-0196 Yokosuka, Japan,
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Abstract

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C – 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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