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Enhanced Light Emission at Self-assembled GaN Inversion Domain Boundary

Published online by Cambridge University Press:  20 June 2011

Mei-Chun Liu ,
Yuh-Jen Cheng ,
Jet-Rung Chang  and
Chun-Yen Chang
Mei-Chun Liu
Affiliation:
Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
Yuh-Jen Cheng
Affiliation:
Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
Jet-Rung Chang
Affiliation:
Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Chun-Yen Chang
Affiliation:
Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
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Abstract

We report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.

Keywords

III-Voptical propertiesluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1324: Symposium D – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2011 , mrss11-1324-d09-04
Copyright
Copyright © Materials Research Society 2011

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References

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