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Enhanced Hydrogen Diffusion Under Illumination in Hydrogenated Amorphous Silicon
Published online by Cambridge University Press: 21 February 2011
Abstract
We provide experimental evidence for the fact that hydrogen diffusion in hydroge-nated amorphous silicon is controlled by the concentration of electronic carriers. It is experimentally demonstrated that the hydrogen diffusion coefficient (a) is enhanced if the carrier population is increased by illumination and (b) is strongly suppressed if carriers are extracted from the diffusion region by the application of an electric field.
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- Copyright © Materials Research Society 1992
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