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Enhanced Conduction In Sipos Films With High Oxygen Content

Published online by Cambridge University Press:  22 February 2011

K.-T. Chang ,
C. Lam  and
K. Rose
K.-T. Chang
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, New York 12181
C. Lam
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, New York 12181
K. Rose
Affiliation:
Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, New York 12181
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Abstract

Polysilicon films with high oxygen content (SIPOS) have been prepared by LPCVD. These films have a two-phase structure with silicon crystallites surrounded by amorphous oxide, as confirmed by TEM and HRTEM measurements. Increasing the ratio of nitrous oxide to silane, R, during growth allows us to vary the oxygen concentration. Contrary to expectation, we observe a region where conduction increases as R is increased from 1 to 10. This can be accounted for by deviations from monotonicity in the dependence of silicon volume fraction on R. We also observe some influence of the SIPOS/silicon interface on conduction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 193
Copyright
Copyright © Materials Research Society 1988

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