Inorganic erbium-doped glasses are widely used in telecommunications due to the sharp intra-atomic 4I13/2 → 4I15/2 transition in the 4f orbital of erbium resulting in an emission at ∼ 1.5 μm, which is the low loss window of silica optical fibres. The limited erbium concentration of about 1020 ions/cm3 in inorganic erbium-doped glasses and the low absorption coefficient of the Er3+ ions, imply that relatively long lengths of fibre are required. Organic erbium complexes present higher absorption cross sections due to the photosensitization of erbium by the organic conjugated ligands and broader emission bands than those of the free Er3+ ions. Such properties open the possibility to develop compact, low power and broadband infrared emitting devices. We present the study of an organic fluorinated erbium complex exhibiting 1.5 μm luminescence lifetime of several hundreds of microseconds measured on thin film. The organic complex has been deposited by vacuum sublimation technique. This deposition method allows the realization of an erbium-doped thin film without the help of an organic polymer matrix, which is a potential source of vibrationnal luminescence quenching. We report the synthesis, the sublimation process, and the characterization of the thin films. The chemical structure of the complex is assessed by FTIR, NMR and MALDI-TOF. Chemical integrity of the thin film after vacuum deposition is determined by FTIR. The morphology of the thin film is characterized by X-ray diffraction experiments. The optical properties of the thin film are determined by spectroscopic ellipsometry, UV-Vis-NIR absorption spectroscopy and time resolved NIR photoluminescence spectroscopy.