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Engineering of PECVD Systems for Macroelectronic Applications

Published online by Cambridge University Press:  21 February 2011

R. Martins ,
I. Ferreira ,
C. N. Carvalho ,
A. Maçarico  and
L. Guimarães
R. Martins
Affiliation:
Department of Materials Science, Faculty of Science and Technology of New University of Lisbon, 2825 - Monte da Caparica, PORTUGAL.
I. Ferreira
Affiliation:
Department of Materials Science, Faculty of Science and Technology of New University of Lisbon, 2825 - Monte da Caparica, PORTUGAL.
C. N. Carvalho
Affiliation:
Department of Materials Science, Faculty of Science and Technology of New University of Lisbon, 2825 - Monte da Caparica, PORTUGAL.
A. Maçarico
Affiliation:
Department of Materials Science, Faculty of Science and Technology of New University of Lisbon, 2825 - Monte da Caparica, PORTUGAL.
L. Guimarães
Affiliation:
Department of Materials Science, Faculty of Science and Technology of New University of Lisbon, 2825 - Monte da Caparica, PORTUGAL.
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Abstract

The materials quality (uniformity and homogeneity) produced by PECVD technique depends on the plasma behaviour. Problems related to the gas dissociation ratio and powder formation are responsible for materials costs and the appearance of voids. In this paper, we present data concerning the role of the plasma and reactor design, on the deposition conditions, suggesting ways to improve them for large area device (macroelectronics) applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 153
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Schmitt, J. P. M., Proc. of MRS Spring Meeting, Vol. 219 (1991) 631–642.Google Scholar
[2] Willeke, G. and Martins, R., Phil. Mag., Vol. 63 no 1, (1991), 76–86.Google Scholar
[3] Martins, R., Ferreira, I., Carvalho, N. and Guimarães, L., Journal of Non-Cryst. Solids, 137&138 (1991) 757–760.Google Scholar