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Emissivity Of Rough Silicon Surfaces: Measurement And Calculations

Published online by Cambridge University Press:  15 February 2011

H. Xu  and
J. C. Sturm
H. Xu
Affiliation:
Department of Electrical Engineering, Princeton University, NJ 08544
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, NJ 08544
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Abstract

The directional reflectance and approximate emissivity of rough silicon wafers were measured by reflection measurements using a single point detector and a broad area illumination source. Experiments were also performed to determine the cone angle of the incident light required to properly measure the emissivity of rough backsides. Based on surface roughness parameters acquired with an Atomic Force Microscope, reflectance calculations were performed within the framework of the Beckmann-Spizzichino model. The results are qualitatively consistent with experimental observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 29
Copyright
Copyright © Materials Research Society 1995

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