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Emission of Charged Particles from Laser Irradiated Silicon

Published online by Cambridge University Press:  15 February 2011

J.M. Liu ,
R. Yen ,
H. Kurz  and
N. Bloembergen
J.M. Liu
Affiliation:
Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
R. Yen
Affiliation:
Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
H. Kurz
Affiliation:
Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
N. Bloembergen
Affiliation:
Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
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Abstract

Emission of charged particles from (111) and (100) crystalline silicon surfaces during and following picosecond pulsed laser irradiation in vacuo has been investigated.

No thermionic electron emission is observable, setting an upper limit of 5000°K on the electron temperature during the laser pulses at 532 nm and at 266 nm. Equal number of positive and negative particles are emitted when the laser energy fluence is sufficient to cause vaporization of a few surface layers. Significantly larger amount of electrons than that of positive particles are emitted under irradiation with UV pulses at low energy fluences. This phenomenon can be tentatively explained by thermally enhanced photoelectric emission from a molten silicon surface.

The presence or absence of the emission of charged particles sets important lower or upper limits on the temperature of the electrons and of the lattice. Our data are fully consistent with a model of complete thermalization between carriers and lattice on a time scale of 10–11 sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 29
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Bloembergen, N., Kurz, H., Liu, J.M. and Yen, R., this Conference Proceedings (1981).Google Scholar
2. Stritzker, S., Pospieszczyk, B. and Tagle, J.A., Phys. Rev. Lett. 47, 356 (1981).CrossRefGoogle Scholar
See also paper in this Conference Proceedings.Google Scholar
3. Yen, R., Liu, J.M. and Bloembergen, N., Optics Comm. 35, 277 (1980).CrossRefGoogle Scholar
4. Yen, R., Liu, J.M. and Bloembergen, N. and Yee, T.K., Fujimoto, J.G. and Salour, M.M., Appl. Phys. Lett. 40 (1982).Google Scholar
5. Liu, J.M., Yen, R., Kurz, H. and Bloembergen, N., App1. Phys. Lett. 39, 755 (1981).Google Scholar
6. Broudy, R.M., Phys. Rev. B8, 3430 (1970).CrossRefGoogle Scholar
7. Liu, J.M., Kurz, H. and Bloembergen, N., to be published.Google Scholar
8. Liu, P.L., Yen, R. and Bloembergen, N., Appl. Phys. Lett. 34, 864 (1979).CrossRefGoogle Scholar
9. Bechtel, J.H., Smith, W.L. and Bloembergen, N., Phys. Rev. B15, 4557 (1977).Google Scholar
10. Yen, R., Ph.D. Thesis. a1=3×l10−14 cm2−sec/coul for tungsten.Google Scholar