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Emission and Strain in InGaAs/GaAs structures with Embedded InAs quantum dots

Published online by Cambridge University Press:  05 March 2013

Ricardo Cisneros Tamayo ,
Georgiy Polupan  and
Leonardo G. Vega Macotela
Ricardo Cisneros Tamayo
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Georgiy Polupan
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Leonardo G. Vega Macotela
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
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Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Keywords

III-VNanostructureself-assembly
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1534: Symposium 6B – Low-Dimensional Semiconductor Structures , 2013 , pp. A63 - A68
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Takahasi, M., Kaizu, T., Journal of Crystal Growth 311, 1761–1763 (2009)CrossRefGoogle Scholar
Dhamodaran, S., Sathish, N., Pathak, A.P., Khan, S.A., Avasthi, D.K., Srinivasan, T., Muralidharan, R., Arora, B.M., Nuclear Instruments and Methods in Physics Research B 256, 260–265 (2007)CrossRefGoogle Scholar
Amtout, , Raghavan, S., Rotella, P., von Winckel, G., Stinz, A. and Krishna, S., J. Appl. Phys. 96, pp. 3782 (2004)CrossRefGoogle Scholar
Torchinskaya, T. V., Opto-electronics Review, 121–130, 1998 (2).Google Scholar
Haft, D., Warburton, R.J., Karrai, K., Huant, S., Medeiros-Ribeiro, G., Garsia, J., Schoenfeld, W. and Petroff, P.M., Appl. Phys. Lett. 78, pp. 2946 (2001)CrossRefGoogle Scholar
Stintz, , Liu, G.T., Gray, L., Spillers, R., Delgado, S.M. and Malloy, K.J., J. Vac. Sci. Technol. B18(3), pp. 1496 (2000)CrossRefGoogle Scholar
Torchynska, T.V., J. Appl. Phys. 104(7), art.no. 074315 (2008)CrossRefGoogle Scholar
Torchynska, T.V., Casas Espinola, J.L., Borkovska, L., Ostapenko, S., Dybiec, M., Polupan, O., Korsunska, N., Stintz, A., Eliseev, P.G. and Malloy, K.J., J. Appl. Phys. 101(2), art.no. 024323 (2007)CrossRefGoogle Scholar
BenNaceur, H., Moussa, I., Tottereau, O., Rebey, A., El Jani, B., Physica E 41, 1779–1783 (2009)CrossRefGoogle Scholar
Torchynska, T.V., Ostapenko, S., Dybiec, M., Phys. Rev. B 72(19), pp. 1–7 (2005)CrossRefGoogle Scholar
Dybiec, M., Ostapenko, S., Torchynska, T. V. and Velasquez Losada, E., Appl. Phys. Lett. 84(25), pp. 5165–5167 (2004)CrossRefGoogle Scholar
Shu, G.W., Wang, J.S., Shen, J.L., Hsiao, R.S., Chen, J.F., Lin, T.Y., Wu, C.H., Huang, Y.H., Yang, T.N., Mater. Scien. and Engin. B, 166, 46–49 (2010)CrossRefGoogle Scholar
Dybiec, M., Borkovska, L., Ostapenko, S., Torchynska, T.V., Casas Espinola, J.L., Stinz, A., Malloy, K.J., Appl. Surf. Scien. 252 (15) 5542–5545 (2006).CrossRefGoogle Scholar
Torchynska, T.V., Diaz Cano, A., Dybic, M., Ostapenko, S., Mynbaeva, M., Physica B, Condensed Matter, 376–377 (1), 367–369 (2006).Google Scholar
Varshni, Y. P., Physica 34, 149 (1967).CrossRefGoogle Scholar
Landolt-Boernstein, A., Numerical Data and Functional Reationship, in: Science and Techology, Vol. 22 (Springer, Berin, 1987), p. 118.Google Scholar
http://www.ioffe.ru/SVA/NSM/Semicond.Google Scholar
Torchynska, T.V., Stintz, A., J. Applied Physics, 108, 2, 024316 (2010).CrossRefGoogle Scholar
Torchynska, T.V., Velazquez Lozada, E., Casas Espinola, J.L., J. Vacuum. Scien. And Techn. B, 27(2) 919–922 (2009).CrossRefGoogle Scholar