Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-20T04:48:00.522Z Has data issue: false hasContentIssue false

Emission and Strain in InGaAs/GaAs structures with Embedded InAs quantum dots

Published online by Cambridge University Press:  05 March 2013

Ricardo Cisneros Tamayo
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Georgiy Polupan
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Leonardo G. Vega Macotela
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México.
Get access

Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Takahasi, M., Kaizu, T., Journal of Crystal Growth 311, 17611763 (2009)CrossRefGoogle Scholar
Dhamodaran, S., Sathish, N., Pathak, A.P., Khan, S.A., Avasthi, D.K., Srinivasan, T., Muralidharan, R., Arora, B.M., Nuclear Instruments and Methods in Physics Research B 256, 260265 (2007)CrossRefGoogle Scholar
Amtout, , Raghavan, S., Rotella, P., von Winckel, G., Stinz, A. and Krishna, S., J. Appl. Phys. 96, pp. 3782 (2004)CrossRefGoogle Scholar
Torchinskaya, T. V., Opto-electronics Review, 121130, 1998 (2).Google Scholar
Haft, D., Warburton, R.J., Karrai, K., Huant, S., Medeiros-Ribeiro, G., Garsia, J., Schoenfeld, W. and Petroff, P.M., Appl. Phys. Lett. 78, pp. 2946 (2001)CrossRefGoogle Scholar
Stintz, , Liu, G.T., Gray, L., Spillers, R., Delgado, S.M. and Malloy, K.J., J. Vac. Sci. Technol. B18(3), pp. 1496 (2000)CrossRefGoogle Scholar
Torchynska, T.V., J. Appl. Phys. 104(7), art.no. 074315 (2008)CrossRefGoogle Scholar
Torchynska, T.V., Casas Espinola, J.L., Borkovska, L., Ostapenko, S., Dybiec, M., Polupan, O., Korsunska, N., Stintz, A., Eliseev, P.G. and Malloy, K.J., J. Appl. Phys. 101(2), art.no. 024323 (2007)CrossRefGoogle Scholar
BenNaceur, H., Moussa, I., Tottereau, O., Rebey, A., El Jani, B., Physica E 41, 17791783 (2009)CrossRefGoogle Scholar
Torchynska, T.V., Ostapenko, S., Dybiec, M., Phys. Rev. B 72(19), pp. 17 (2005)CrossRefGoogle Scholar
Dybiec, M., Ostapenko, S., Torchynska, T. V. and Velasquez Losada, E., Appl. Phys. Lett. 84(25), pp. 51655167 (2004)CrossRefGoogle Scholar
Shu, G.W., Wang, J.S., Shen, J.L., Hsiao, R.S., Chen, J.F., Lin, T.Y., Wu, C.H., Huang, Y.H., Yang, T.N., Mater. Scien. and Engin. B, 166, 4649 (2010)CrossRefGoogle Scholar
Dybiec, M., Borkovska, L., Ostapenko, S., Torchynska, T.V., Casas Espinola, J.L., Stinz, A., Malloy, K.J., Appl. Surf. Scien. 252 (15) 55425545 (2006).CrossRefGoogle Scholar
Torchynska, T.V., Diaz Cano, A., Dybic, M., Ostapenko, S., Mynbaeva, M., Physica B, Condensed Matter, 376377 (1), 367369 (2006).Google Scholar
Varshni, Y. P., Physica 34, 149 (1967).CrossRefGoogle Scholar
Landolt-Boernstein, A., Numerical Data and Functional Reationship, in: Science and Techology, Vol. 22 (Springer, Berin, 1987), p. 118.Google Scholar
Torchynska, T.V., Stintz, A., J. Applied Physics, 108, 2, 024316 (2010).CrossRefGoogle Scholar
Torchynska, T.V., Velazquez Lozada, E., Casas Espinola, J.L., J. Vacuum. Scien. And Techn. B, 27(2) 919922 (2009).CrossRefGoogle Scholar