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Elimination of Subboundaries from Zone-Melting-Recrystallized Silicon-On-Insulator Films

Published online by Cambridge University Press:  28 February 2011

M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
C. K. Chen
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Henry I. Smith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
P. M. Nitishin
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. W. Mountain
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
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Abstract

Since the introduction of zone-melting recrystallization (ZMR)for silicon-on-insulator (SOI) films, subboundaries (low-angle grain boundaries) have been the major crystalline defects in recrystallized films. By using an improved ZMR procedure, subboundaries have been eliminated over large areas. The improvements include the use of 1-µm-thick polycrystalline-Si films deposited on 2-µm-thick thermal SiO2 film (instead of 0.5-µm-thick Si and SiO2 films), a new encapsulation technique, and improved control of the thermal gradient during ZMR. Recrystallized SOI films without subboundaries contain isolated dislocations with densities <2 × 106 cm−2.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1.See J. Cryst. Growth, 63, 3 (1983). ed. Cullen, G. W., an issue devoted to SOI technology.Google Scholar
2.Geis, M. W., Smith, H. I and Chen, C. K., J. Appl. Phys. (to be published).Google Scholar
3.Geis, M. W., Smith, H. I., Tsaur, B-Y., Fan, J. C. C., Silversmith, D. C., and Mountain, R. W., J. Electrochem. Soc. 129, 2812 (1982).Google Scholar
4.Smith, H. I., Geis, M. W., Thompson, C. V., and Chen, C. K., in Semiconductor-on-Insulator and Thin Film Technology, Chiang, A., Geis, M. W. and Pfeiffer, L., eds. (Materials Research Society), this volume.Google Scholar
5.Haond, M., Vu, D. P. and Bensahel, D., J. Appl. Phys. 54, 3892 (1983).Google Scholar
6.Baumgart, H. and Phillipp, F., in Energy Beam-Solid Interactions and Transient Thermal Processing, Biegelsen, D. K., Rozgonyi, G. A. and Shank, C. V., eds. (Materials Research Society) vol. 35, 593 (1984).Google Scholar
7.Peiffer, L., West, K. W. and Joy, D. C., in Semiconductor-on-Insulator and Thin Film Technology, Chiang, A., Geis, M. W. and Peiffer, L., eds. (Materials Research Society) this volume.Google Scholar
8.Chen, C. K., Geis, M. W., Finn, M. C., and Tsaur, B-Y., Appl. Phys. Lett. (to be published).Google Scholar
9.Chen, C. K., Pfeiffer, L., West, K. W., Geis, M. W., Darack, S., Achaibar, G., Mountain, R. W., and Tsaur, B-Y., in Semiconductor-on-Insulator and Thin Film Technology, Chiang, A., Geis, M. W. and Pfeiffer, L., eds. (Materials Research Society), this volume.Google Scholar
10.Chen, C.K., Geis, M. W., Choi, H. K., Tsaur, B-Y., and Fan, J. C. C., in Energy Beam-Solid Interactions and Transient Thermal Processing, Biegelsen, D. K., Rozgonyi, G. A. and Shank, C. V. eds. (Materials Research Society) vol. 35, 613 (1984).Google Scholar
11.D'Aragona, F. Secco, J. Electrochem. Soc. 119, 948 (1972).Google Scholar
12.Fan, J.C.C., Geis, M. W. and Tsaur, B-Y., Appl. Phys. Lett. 38, 365 (1981).Google Scholar
13.Geis, M. W., Smith, H. I., Silversmith, D., and Mountain, R. W., J. Electrochem. Soc. 130, 1178 (1983).Google Scholar
14.Gibson, J.M., in Semiconductor-on-Insulator and Thin Film Technology, Chiang, A., Geis, M. W. and Pfieffer, L., eds. (Materials Research Society), this volume.Google Scholar
15.Chen, C. K., Geis, M. W., B-Y Tsaur, Chapman, R. L., and Fan, J. C. C., J. Electrochem. Soc. 131, 1707 (1984).Google Scholar
16.Celler, G. K., McD. Robinson, Lischner, D. J., and Sheng, T. T., in Laser-Solid Interactions and Transient Thermal Processing of Materials, Narayan, J., Brown, W. L. and Lemons, R. A., eds. (Materials Research Society), vol. 13, 575 (1982).Google Scholar
17.Pfeiffer, L.. West, K. W., Paine, S., and Joy, D. C., in Energy Beam-Solid Interactions and Transient Thermal Processing, Biegelsen, D. K., Rozgonyi, G. A. and Shank, C. V., eds. (Materials Research Society) vol. 35, 583 (1984).Google Scholar