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Electro-Optical Studies of Vanadium in GaP by Space Charge Spectroscopies
Published online by Cambridge University Press: 22 February 2011
Abstract
A complete understanding of the electrical and optical properties of the Vanadium related donor level (VGa3+/VGa4+) in GaP is deduced from a number of different characterization techniques (deep level transient and deep level optical spectroscopies, optical absorption) performed on p-type V doped GaP. The VGa3+/VGa4+ donor level is located at Ev+0.25eV. This assignment is based on the correlation of optical absorption spectra and the photoneutralization cross-section σp°(hv) curve obtained by deep level optical spectroscopy confirming that this technique is very unique for deep level identification in semiconductor materials.
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- Copyright © Materials Research Society 1992
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