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Electron-Radiation-Induced Epitaxial Growth of CoSi2 on Si(111)

Published online by Cambridge University Press:  25 February 2011

C. W. Nieh ,
T. L. Lin  and
R. W. Fathauer
C. W. Nieh
Affiliation:
Keck Laboratory of Engineering, California Institute of Technology, Pasadena, California 91125
T. L. Lin
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
R. W. Fathauer
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
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Abstract

We report electron-radiation-induced epitaxial growth of CoSi2 on Si(111) from an amorphous Co/Si 1:2 mixture with epitaxial CoSi2 nuclei. Under the electron beam of a Philips EM430 electron microscope, the epitaxial nuclei grow parallel to the surface with a growth rate orders of magnitude higher than that for thermally activated growth. The substrate temperature during irradiation and the electron energy dependence were studied. Electron-radiation-induced growth shows very weak temperature dependence in the temperatures between 100°K and 300°K and the activation energy is 0.03 eV. The growth rate increases significantly as the electron energy increased to 200 KeV which is about the threshold energy for displacing Si atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 89
Copyright
Copyright © Materials Research Society 1989

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