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Electronically Enhanced Reaction of Process-Induced Defects in GaAs

Published online by Cambridge University Press:  10 February 2011

K. Wada ,
H. Nakanishi ,
K. Yamada  and
L.C. Kimerling
K. Wada
Affiliation:
Present address: Massachusetts Institute of Technology, Cambridge, MA 02139
H. Nakanishi
Affiliation:
Present address, Kochi University, Akebono, Kochi, Japan
K. Yamada
Affiliation:
NIT System Electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
L.C. Kimerling
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

The present paper reviews current understanding on enhanced reactions of process-induced defects in GaAs under electronic excitation. Device processing to be employed for point defect generation is Be ion implantation and Ar plasma etching. It is shown that reduction of electronic active centers is clearly enhanced by annealing under forward bias application and by annealing under reverse bias application at temperature as low as 200°C. The enhancement mechanisms are discussed in terms of recombination-enhanced defect reaction and structural instability induced by charge state effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 201
Copyright
Copyright © Materials Research Society 1998

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References

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