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Electronic Structure of Ru2 Si3

Published online by Cambridge University Press:  15 February 2011

P. Pecheur  and
G. Toussaint
P. Pecheur
Affiliation:
Laboratoire de physique du solide Ecole des Mines, Parc de Saurupt, 54042 Nancy Cedex France
G. Toussaint
Affiliation:
Laboratoire de physique du solide Ecole des Mines, Parc de Saurupt, 54042 Nancy Cedex France
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Abstract

The electronic structure of Ru2Si3 has been calculated with the empirical tight binding method and the recursion procedure. The calculation strongly indicates that there exists a gap in the structure, which makes Ru2Si3 semiconducting, as found experimentally and explains the stability of the chimney-ladder phases for a valence electron concentration per transition metal atom smaller than 14.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 234: Symposium V – Modern Perspectives on Thermoelectrics and Related Materials , 1991 , 157
Copyright
Copyright © Materials Research Society 1991

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References

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