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Electronic Structure of Ru2 Si3
Published online by Cambridge University Press: 15 February 2011
Abstract
The electronic structure of Ru2Si3 has been calculated with the empirical tight binding method and the recursion procedure. The calculation strongly indicates that there exists a gap in the structure, which makes Ru2Si3 semiconducting, as found experimentally and explains the stability of the chimney-ladder phases for a valence electron concentration per transition metal atom smaller than 14.
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- Copyright © Materials Research Society 1991
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