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Electronic Structure of Polycrystalline PECVD Diamond Surfaces

Published online by Cambridge University Press:  10 February 2011

T. P. Humphreys ,
D. P. Malta ,
R. E. Thomas ,
J. B. Posthill ,
M. J. Mantini  and
R. J. Markunas
T. P. Humphreys
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
D. P. Malta
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
R. E. Thomas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
M. J. Mantini
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
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Abstract

Ultraviolet and X-ray photoelectron spectroscopy techniques have been employed in a preliminary study of the electronic structure of polycrystalline diamond films that have been grown on Si substrates by if-plasma enhanced chemical vapor deposition using water/ethanol growth chemistries. In particular, polycrystalline diamond films with distinctly different surface morphologies and Raman scattering characteristics have been investigated. Corresponding ultraviolet photoemission spectra from air-exposed samples have shown the presence of a prominent low-energy secondary electron emission peak indicative of a negative electron affinity (NEA) surface. Chemical stability of the polycrystalline diamond NEA surface has been demonstrated following conventional acid cleans and hydrogen plasma processing. In contrast, an oxygen (20%)/Ar plasma exposure has been shown to extinguish the photoemission of low-energy secondary electrons and remove the NEA. However, by employing a high-temperature anneal at 750 °C for 15 min in ultra-high vacuum the NEA surface can be restored. Compared to NEA single crystal diamond surfaces the photoexcited low-energy electron emission from chemical vapor deposited polycrystalline diamond films is more robust.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 133
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Geis, M. W., Efremow, N. N., Woodhouse, J. D., Aleese, M. D., Marchywka, M., Socker, D. G. and Hochedez, J. F., IEEE Electron Device Lett., 12, 456 (1991).Google Scholar
2. Liu, J., Zhirnov, V.V., Wojak, G. J., Myers, A. F., Choi, W. B., Hren, J. J., Wolter, S. D., McClure, M. T., Stoner, B. R. and Glass, J. T., Appl. Phys. Lett., 65, 2842 (1995).Google Scholar
3. Xu, N. S., Latham, R. V. and Tzeng, Y., Electronics Letters., 29, 1596 (1993).Google Scholar
4. Okano, K. and Gleason, K. K., Electronics Letters., 31, 74 (1995).Google Scholar
5. Zhu, W., Kochanski, G. P., Jin, S. and Seibles, L., J. Appi. Phys., 78, 2707 (1995).Google Scholar
6. Zhu, W., Kochanski, G. P., Jin, S., Seibles, L., Jacobson, D. C., McCormack, M. and White, A. E., Appl. Phys. Lett., 67, 1157 (1995).Google Scholar
7. Himpsel, F. J., Knapp, J. A., Vechten, J. A. van and Eastman, D. E., Phys. Rev., B 20, 624 (1979).Google Scholar
8. Weide, J. van der and Nemanich, R. J., Appl. Phys. Lett., 62, 1878 (1993).Google Scholar
9. Thomas, R. E, Humphreys, T. P., Malta, D. P, Mantini, M. J., Posthill, J. B., Rudder, R. A., Hudson, G. C. and Markunas, R. J., presented at this conference proceedings.Google Scholar
10. Rudder, R. A., Hudson, G. C., Posthill, J. B., Thomas, R. E., Hendry, R. C., Malta, D. P., Markunas, R. J., Humphreys, T. P. and Nemanich, R. J., Appl. Phys. Lett., 60, 329 (1992).Google Scholar
11. Malta, D. P., Posthill, J. B., Humphreys, T. P., Thomas, R. E., Fountain, G. G., Rudder, R. A., Hudson, G. C., Mantini, M. J. and Markunas, R. J., Appl. Phys. Lett., 64, 1929 (1994).Google Scholar
12. Huang, Z-H., Cutler, P. H., Miskovsky, N. M. and Sullivan, T. E., Appl. Phys. Lett., 65, 2562 (1994).Google Scholar
13. Thomas, R. E., Rudder, R. A. and Markunas, R. J., J.Vac. Sci. Technol., 10. 2451, (1992).Google Scholar