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Electronic Structure of N-V Centers and Terahertz Spectroscopy of Diamond

Published online by Cambridge University Press:  25 February 2011

D. A. Redman
Affiliation:
Dept. of EECS, University of Michigan, Ann Arbor, MI 48109–2122
Q. Shu
Affiliation:
Dept. of EECS, University of Michigan, Ann Arbor, MI 48109–2122
S. W. Brown
Affiliation:
Dept. of EECS, University of Michigan, Ann Arbor, MI 48109–2122
A. Lenef
Affiliation:
Dept. of EECS, University of Michigan, Ann Arbor, MI 48109–2122
Y. Lrj
Affiliation:
Dept. of EECS, University of Michigan, Ann Arbor, MI 48109–2122
J. Whitaker
Affiliation:
Dept. of EECS, University of Michigan, Ann Arbor, MI 48109–2122
S. C. Rand
Affiliation:
Dept. of EECS, University of Michigan, Ann Arbor, MI 48109–2122
S. Satoh
Affiliation:
Sumitomo Electric Industries, Ltd., Itami Research Laboratories, Hyogo, Japan
K. Tsuji
Affiliation:
Sumitomo Electric Industries, Ltd., Itami Research Laboratories, Hyogo, Japan
S. Yazu
Affiliation:
Sumitomo Electric Industries, Ltd., Itami Research Laboratories, Hyogo, Japan
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Abstract

We report an essentially complete characterization of energies and relaxation processes of the lowest seven electronic states of the N-V (nitrogen-vacancy) center in diamond using several different nonlinear laser spectroscopie techniques. We have also applied ultrafast optical techniques to measure dielectric properties of CVD and bulk diamond in the 0.3–1.6 THz range for the first time.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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