Hostname: page-component-5cf477f64f-h6p2m Total loading time: 0 Render date: 2025-04-03T16:54:13.088Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Structure of GaAs/GaInP Strained Layer Quantum Wells

Published online by Cambridge University Press:  25 February 2011

K. Rerbal ,
K. Zitouni  and
A. Kadri
K. Rerbal
Affiliation:
MicroOptoElectronics Laboratory, Institute of Physics, University of Oran Es-Senia, 31100 ORAN, ALGERIA
K. Zitouni
Affiliation:
MicroOptoElectronics Laboratory, Institute of Physics, University of Oran Es-Senia, 31100 ORAN, ALGERIA
A. Kadri
Affiliation:
MicroOptoElectronics Laboratory, Institute of Physics, University of Oran Es-Senia, 31100 ORAN, ALGERIA
Get access

Abstract

This work reports on the calculations of the electronic structure of GaAs/GaxIn1−x P strained layer quantum wells. The calculations are based on the multiband envelope function approach, considering the valence band offset value that has been recently proposed. The effect of strain due to the lattice-mismatch is studied. The calculated results are compared with the data obtained from photoreflectance measurements. Satisfactory agreement is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 209
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1- Razeghi, M., Defour, M., Dobers, M., Vieren, J.P., Guldner, Y. Appl. Phys. Lett. 55, 457 (1989).Google Scholar
2- Olson, J.M., Ahrenkiel, R.K., Dulavy, D.J., Keyes, B., Kibbler, A.E., Appl. Phys. Lett. 55, 1208, (1989).Google Scholar
3- Marov, J., Introduction to MOS LSI, Addison-Wesley, London (1983).Google Scholar
4- Arnauld, G., Boring, P., Gil, B., Garcia, J.C., Landesman, J.P., Leroux, M., Phys. Rev. B31, 888, (1992).Google Scholar
5- Chen, J., Sites, J.R., Spain, L., Hafich, M.J., Robinson, G.Y. Appl. Phys. Lett. 58, 7, 744 (1991).Google Scholar
6- Luttinger, J.M., Kohn, W., Phys. Rev. 97, 869 (1955).Google Scholar
7- Bir, G.L., Pikus, G.E., Symmetry and Strain-Induced effects in Semiconductors (Wiley-New-York 1974).Google Scholar
8- Numerical Data and Functional Relation in Science and Techn. ed. by Hellewege, in Landolt Burnstein, New York Series, Group III Vol 17 (a), (Springer Berlin 1982)Google Scholar