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Electronic Structure of Epitaxial Silicon Interfaces

Published online by Cambridge University Press:  16 February 2011

Hideaki Fujitani  and
Setsuro Asano
Hideaki Fujitani
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
Setsuro Asano
Affiliation:
College of Arts and Sciences, University of Tokyo, 3-8-1 Komaba, Meguro, Tokyo 153, Japan
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Abstract

Using the linear muffin-tin orbital method in the atomic sphere approximation (LMTO-ASA), we studied the electronic structure of the Si(111) interface for four different materials: CaF2, NiSi2, CoSi2, and YSi2. We examined how the interface states and Schottky barrier height depend on the interface atomic structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 193: Symposium Q – Atomic Scale Calculations of Structure in Materials , 1990 , 77
Copyright
Copyright © Materials Research Society 1990

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References

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