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Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

Published online by Cambridge University Press:  21 March 2011

Yong Zhang ,
B. Fluegel ,
M. Hanna ,
A. Duda  and
A. Mascarenhas
Yong Zhang
Affiliation:
[email protected]
B. Fluegel
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, CO 80401, USA
M. Hanna
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, CO 80401, USA
A. Duda
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, CO 80401, USA
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, CO 80401, USA
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Abstract

Isoelectronic impurity nitrogen atoms have been found to generate a series of localized states in GaP and GaAs. These states can be either bound (within the band gap) or resonant (above the band gap) when in the dilute doping limit (roughly < 1019 cm−3 for GaP and < 1018 cm−3 for GaAs). With increasing nitrogen doping level, a shift of the absorption edge from the binary band gap has been observed for the so-called GaPN or GaAsN alloy. We discuss the similarity and dissimilarity between the two systems in the following aspects: (1) How does the nitrogen doping perturb the host band structure? (2) How do the nitrogen bound states evolve with increasing nitrogen doping level? (3) What are the dominant contributors to the band edge absorption? And (4) does a universal model exist for GaPN and GaAsN? Other issues that will be discussed are: how does one define the band gap for these materials, and what is the relevance of various theoretical band structure calculations to the experimentally measured parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H2.1.1
Copyright
Copyright © Materials Research Society 2002

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