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Electronic Stopping of Channeled Ions in Silicon

Published online by Cambridge University Press:  25 February 2011

Gerhard Hobler  and
Hans W. Pötzl
Gerhard Hobler
Affiliation:
University of Technology Vienna, Guβhausstraβe 27–29/3598, A-1040 Vienna, Austria
Hans W. Pötzl
Affiliation:
University of Technology Vienna, Guβhausstraβe 27–29/3598, A-1040 Vienna, Austria Ludwig-Boltzmann-Institut für Festkörperphysik, Kopernikusgasse 15, A-1060 Vienna, Austria
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Abstract

Concentration profiles of channeling and random implants of boron, phosphorus, and arsenic in silicon are compiled from the literature and are analyzed using Monte Carlo simulations. An empirical 3-parameter model of the electronic stopping power is found which yields excellent results for all channeling directions in the energy range of about 20 keV to 1 MeV. The model contains a local impact parameter dependent part and a nonlocal part, the latter increasing with ion energy. In addition, local electron density dependent stopping power models are investigated, using a realistic electron density distribution obtained by first principles band structure calculations. These models fail to describe the slowing down of ions channeled along the <110> axis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 165
Copyright
Copyright © Materials Research Society 1993

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References

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