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Electronic Properties of Thin PD Overlayers on Au(111): Relationship to Chemisorption Properties

Published online by Cambridge University Press:  22 February 2011

Xinyin Shena
Affiliation:
Physics Department, Montana State Univ., Bozeman, MT 59717
D. J. Frankel
Affiliation:
Physics Department, Montana State Univ., Bozeman, MT 59717
J. Hermanson
Affiliation:
Physics Department, Montana State Univ., Bozeman, MT 59717
G. J. Lapeyre
Affiliation:
Physics Department, Montana State Univ., Bozeman, MT 59717
R. J. Smith
Affiliation:
Physics Department, Montana State Univ., Bozeman, MT 59717
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Abstract

We present results for the electronic structure and chemical properties of thin Pd films grown epitaxially on Au(lll) single-crystal substrates. Photoemission spectroscopy is used to monitor the development of the Pd d-bands near the Fermi energy (EF ) as a function of overlayer thickness. The state density aF E is relatively small for the single Pd monolayer (ML), but increases monotonically with overlayer thickness, resembling the bulk Pd electronic structure for films thicker than 5 ML. At the same time we observe that the 1 ML Pd film is iner with respect to CO chemisorption, while the multilayer films readily chemisorb CO, similar to bulk Pd. We examine possible models for the inert behavior of the Pd monolayer, based on related slab calculations which show the substrate-induced modification of the electronic structure in the overlayer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

Permanent address: Beijing Normal Univ., People's Republic of ChinaGoogle Scholar
1. Sachtler, J. W. A., Van Hove, M. A., Biberian, J. P. and Somorjai, G. A., Phys. Rev. Lett. 45, 1601 (1980).Google Scholar
2. Pick, M. A., Davenport, J. W., Strongin, M. and Dienes, G. J., Phys. Rev. Lett. 43, 286 (1979).CrossRefGoogle Scholar
3. Brodsky, M. B. and Freeman, A. J., Phys. Rev. Lett. 45, 133 (1980).Google Scholar
4. Zhu, X. and Hermanson, J., Phys. Rev. B 27, 2092 (1983)CrossRefGoogle Scholar
5. Huang, H., Zhu, X. and Hermanson, J., Phys. Rev. B29, 2270(1984)Google Scholar
6. Zhu, X., Hermanson, J., Arlinghaus, F.J., Gay, J.G., Richter, R., and Smith, J. R., Phys. Rev. D 21, 4426 (1984).Google Scholar
7. Weissman-Wenocur, D. L., Stefan, P. M., Pate, B. B., Shek, M. L., Lindau, I., and Spicer, W. E., Phys. Rev. B 27, 3308 (1983).Google Scholar
8. See for example Loyd, D. R., Quin, C. M., and Richardson, N. V., Solid State Commun. 20, 409 (1976).Google Scholar