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Electronic properties of the ZnO:Al/n-Si (100), (110) and (111) interfaces

Published online by Cambridge University Press:  09 June 2014

Per Lindberg ,
Vincent Quemener ,
Kristin Bergum ,
Jiantuo Gan ,
Bengt G. Svensson  and
Edouard V. Monakhov
Per Lindberg
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
Vincent Quemener
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
Kristin Bergum
Affiliation:
Department of Chemistry/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1126 Blindern, N-0318 Oslo, Norway.
Jiantuo Gan
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
Bengt G. Svensson
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
Edouard V. Monakhov
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
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Abstract

Aluminum doped ZnO (AZO) has been deposited on (100), (110) and (111) oriented n-type Si and on fused silica by atomic layer deposition (ALD). The films have been post deposition annealed in the temperature range 200-500 οC. The AZO films have been characterized by X-ray diffraction (XRD), Hall and transmittance measurements. Circular diodes have been fabricated from the AZO/Si structures and characterized by current-voltage (IV) and deep level transient spectroscopy (DLTS). The AZO films form Schottky junctions with the Si substrates for all the crystallographic orientations. It is established that after post deposition annealing the structure AZO/n-Si (110) is distinguished as the system with largest rectification.

Keywords

deep level transient spectroscopy (DLTS)SiII-VI
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1699: Symposium LL – Transparent Electrodes , 2014 , mrss14-1699-ll05-04
Copyright
Copyright © Materials Research Society 2014 

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References

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