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Electronic Properties of Hot-Wire Deposited Nanocrystalline Silicon

Published online by Cambridge University Press:  10 February 2011

R. Brüggemann ,
A. Hierzenberger ,
H.N. Wanka  and
M.B. Schubert
R. Brüggemann
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
A. Hierzenberger
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
H.N. Wanka
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
M.B. Schubert
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Abstract

We compare the electronic properties of nanocrystalline silicon from hot-wire chemical vapor deposition in a high-vacuum and an ultra-high-vacuum deposition system, employing W and Ta as filament material. From the constant photocurrent method we identify a band gap around 1.15 eV while, in contrast, a Tauc plot from optical transmission data guides to a wide band gap above 1.9 eV. The sudden change-over from nanocrystalline to amorphous structure in a hydrogen dilution series is also find in the dark and photoconductivity measurements. The samples show a metastability effect in the dark conductivity upon annealing in vacuum with an increase in the dark conductivity, with the large dark conductivity decreasing slowly after the annealing cycle when the cryostat is flushed with air. We identify larger values for the mobility-lifetime products, which corresponds to the smaller defect density shoulder in constant photocur- rent spectra, for the ultra-high-vacuum deposited material compared to the high-vacuun counterpart.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 921
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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