Hostname: page-component-7bb8b95d7b-lvwk9 Total loading time: 0 Render date: 2024-10-06T04:17:37.930Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Ground State of Iron-Acceptor Pairs in Silicon

Published online by Cambridge University Press:  28 February 2011

C.A.J. Ammerlaan  and
J.J. Van Kooten
C.A.J. Ammerlaan
Affiliation:
Natuurkundig Laboratorium der Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands
J.J. Van Kooten
Affiliation:
Natuurkundig Laboratorium der Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands
Get access

Abstract

Iron-acceptor impurity pairs, consisting of a positively charged iron ion trapped on an interstitial site in the vicinity of an ionized acceptor, in silicon were observed by electron paramagnetic resonance for all common acceptor dopants (B, Al, Ga, In). The Zeeman splittings of these pairs, to which both spin and orbital momenta contribute, cover the range between 1.1 and 6.4. An interpretation of these spectroscopic splitting factors is presented, which considers the effects of the crystal field - of cubic, axial, or lower symmetry - and of spin-orbit interaction on the 4F ground state of the iron ion in a (3d)7 configuration. It is concluded that the apparent quenching of the orbital angular momentum is not due to a dynamical Jahn-Teller effect, nor due to hybridization. Rather, it is proposed that a significant reduction, by about 80%, of the orbital magnetism arises from covalency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 525
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Katayama-Yoshida, H. and Zunger, A., Phys. Rev. Lett. 13, 1256 (1984).CrossRefGoogle Scholar
[2] Greulich-Weber, S., Niklas, J.R., Weber, E.R. and Spaeth, J.M., Phys. Rev. B30, 6292 (1984).Google Scholar
[3] Wezep, D.A. van, Kemp, R. van, Sieverts, E.G. and Ammerlaan, C.A.J., to be published.Google Scholar
[4] Ludwig, G.W. and Woodbury, H.H., Solid State Physics 13, 223 (1962).CrossRefGoogle Scholar
[5] Gehlhoff, W. and Segsa, K.H., Phys. Stat. Sol. (b) 115, 443 (1983).CrossRefGoogle Scholar
[6] Kooten, J.J. van, Weller, G.A. and Ammerlaan, C.A.J., Phys. Rev. B30,4564 (1984).Google Scholar
[7] Corbett, J.W., private communication.Google Scholar
[8] Abragam, A. and Pryce, M.H.L., Proc. Roy. Soc. (London) A206, 173 (1951).Google Scholar
[9] Dunn, T.M., Transactions Faraday Soc. 57, 1441 (1961).Google Scholar
[10] Ham, F.S., in Electron Paramagnetic Resonance, edited by Geschwind, S. (Plenum, New York, 1972); Phys. Rev. 138, A1727 (1965).Google Scholar
[11] Atomic Energy Levels, National Bureau of Standards, Circular 467.Google Scholar
[12] Watkins, G.D., Phys. Rev. 155, 802 (1967).Google Scholar