Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-05T10:25:26.454Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic and Structural Study of Ni(Co) Silicide/Si(111) Contact System Studied by Soft X-Ray Emission Spectroscopy

Published online by Cambridge University Press:  25 February 2011

H. Watabe ,
H. Nakamura ,
M. Iwami ,
M. Hirai  and
M. Kusaka
H. Watabe
Affiliation:
Matsushita Electric Industrial Co., Ltd., Twin 21 National Tower, 1–61 Shiromi 2-Chome, Chuo-ku, Osaka 540, Japan
H. Nakamura
Affiliation:
Osaka Electro-Communication University, Hatsu, Neyagawa, Osaka 572, Japan
M. Iwami
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan
M. Hirai
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan
M. Kusaka
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan
Get access

Abstract

An electron excited Si L2,3 valence band soft x-ray emission spectrum (SXES) for Ni(or Co)Si2 showed a clear modification from that for Si. From the SXES study, a fair amount of the Si(3s) valence band density of state (VB-DOS) is concluded to be included in the upper part of the VB-DOS for the transition metal(TM) disilicides due to the TM-Si bond formation, which is a clear contrast to proposals given so far. Non-destructive structural analysis of a NiSi2 (tens of nm)/Si(111) contact is also carried out successfully using the SXES.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 173
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rubloff, G.W., Surf. Sci. 132, 268 (1983).Google Scholar
2. Iwami, M., Kusaka, M., Hirai, M., Nakamura, H., Shibahara, K. and Matsunami, H., Surf. Sci. 199, 467 (1988).Google Scholar
3. Nakamura, H., Iwami, M., Hirai, M., Kusaka, M., Akao, F. and Watabe, H., submitted.Google Scholar
4. Iwami, M., Nakamura, H., Hirai, M., Kusaka, M., Akao, F. and Watabe, H., Vacuum, in press.Google Scholar
5. Tersoff, J. and Hamann, D.R., Phys. Rev. B28, 1168 (1983).Google Scholar
6. Speier, W., private communication, to be published.Google Scholar
7. Martinage, L., Cherief, N., Pasturel, A., Veullen, J.Y., Papacon-stantopoulos, D. and Cryot-Lackmann, F., presented at the 11th IVC/7th ICSS, Koln, 1989.Google Scholar
8. Okuno, K., Iwami, M., Hiraki, A., Matsumura, M. and Asayama, K., Solid State Commun., 33, 899 (1980).Google Scholar