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Electronic and Structural Study of Ni(Co) Silicide/Si(111) Contact System Studied by Soft X-Ray Emission Spectroscopy

Published online by Cambridge University Press:  25 February 2011

H. Watabe ,
H. Nakamura ,
M. Iwami ,
M. Hirai  and
M. Kusaka
H. Watabe
Affiliation:
Matsushita Electric Industrial Co., Ltd., Twin 21 National Tower, 1–61 Shiromi 2-Chome, Chuo-ku, Osaka 540, Japan
H. Nakamura
Affiliation:
Osaka Electro-Communication University, Hatsu, Neyagawa, Osaka 572, Japan
M. Iwami
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan
M. Hirai
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan
M. Kusaka
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan
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Abstract

An electron excited Si L2,3 valence band soft x-ray emission spectrum (SXES) for Ni(or Co)Si2 showed a clear modification from that for Si. From the SXES study, a fair amount of the Si(3s) valence band density of state (VB-DOS) is concluded to be included in the upper part of the VB-DOS for the transition metal(TM) disilicides due to the TM-Si bond formation, which is a clear contrast to proposals given so far. Non-destructive structural analysis of a NiSi2 (tens of nm)/Si(111) contact is also carried out successfully using the SXES.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 173
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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