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Electron-Beam-Induced Damage in GaAs/AlGaAs Heterostructures

Published online by Cambridge University Press:  25 February 2011

N. Tanaka ,
H. Kawanishi  and
T. Ishikawa
N. Tanaka
Affiliation:
Optoelectronics Technology Research Laboratory (OTL),5–5, Tohkodai, Tsukuba, Ibaraki 300–26, Japan
H. Kawanishi
Affiliation:
Optoelectronics Technology Research Laboratory (OTL),5–5, Tohkodai, Tsukuba, Ibaraki 300–26, Japan
T. Ishikawa
Affiliation:
Optoelectronics Technology Research Laboratory (OTL),5–5, Tohkodai, Tsukuba, Ibaraki 300–26, Japan
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Abstract

We have investigated the effects of electron beam (EB) irradiation on the optical and electrical properties of GaAs/AlGaAs heterostructures in the energy range between 5 and 25 keV. By using 10 keV-EB irradiation, the photoluminescence from quantum wells is shown to be degraded at doses higher than 1×1019 electrons/cm2, further, the two-dimensional-electron-gas mobility is degraded at doses more than 5xl020 electrons/cm2. EB irradiation of 5 and 25 keV, on the other hand, produces no degradation of both properties even at these dose levels. Such an energy dependence of EB-induced damage can be interpreted in terms of the EB energy dependence of the electron penetration and energy-loss-rate. Electrons with an incident energy of 5 keV do not penetrate sufficiently deep into the active region, and 25 keV electrons have an energy-loss-rate that is too low to cause damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 99
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1) Sugimoto, Y., Taneya, M., Akita, K., and Kawanishi, H., J. Appl. Phys. 69, 2725 (1990).CrossRefGoogle Scholar
2) Taneya, M., Sugimoto, Y., Hidaka, H., and Akita, K., J. Appl. Phys. 66, 1375 (1989).CrossRefGoogle Scholar
3) Wong, H. F., Green, D. L., Liu, T. Y., Lishan, D. G., Bellis, M., Hu, E. L., Petroff, P. M., Holtz, P. O., and Merz, J. L., J. Vac. Sci. Technol. B6, 1906 (1988).CrossRefGoogle Scholar
4) Fink, T., Smith, D. D., and Braddock, W. D., IEEE Transaction on Electron Devices. 37, 1422 (1990).CrossRefGoogle Scholar
5) Tanaka, N., Kawanishi, H., and Ishikawa, T., to be published in Jpn. J. Appl. Phys.Google Scholar
6) Pons, D. and Mircea, A., J. Appl. Phys. 51, 4150 (1980).CrossRefGoogle Scholar