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Electron Transport Properties and Thermoelectric Effect of Al-Pd-Mn Single Quasicrystals Doped with M=Au or Re by ion Implantation and its Comparison with Quaternary Quasicrystalline Samples.

Published online by Cambridge University Press:  17 March 2011

V. Fournée ,
U. Mizutani ,
T. Takeuchi ,
K. Saitoh ,
M. Ikeyama ,
J.Q. Guo  and
A.P. Tsai
V. Fournée
Affiliation:
Department of Crystalline Materials Science, Nagoya University, Japan Ames Laboratory, Iowa State University, Ames, Iowa 50011, USA
U. Mizutani
Affiliation:
Department of Crystalline Materials Science, Nagoya University, Japan
T. Takeuchi
Affiliation:
Department of Crystalline Materials Science, Nagoya University, Japan
K. Saitoh
Affiliation:
National Industrial Research Institute of Nagoya, Nagoya, Japan
M. Ikeyama
Affiliation:
National Industrial Research Institute of Nagoya, Nagoya, Japan
J.Q. Guo
Affiliation:
National Research Institute for Metals, Tsukuba, Japan
A.P. Tsai
Affiliation:
National Research Institute for Metals, Tsukuba, Japan
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Abstract

Ion implantation experiments were carried out on a single grain Al-Pd-Mn icosahedral quasicrystal. The influence of Re or Au dopant on the thermopower and the electrical resistivity has been measured. Comparison with ternary and quaternary alloys produced by usual metallurgical techniques is made. The results indicate that the efficiency of this quasicrystalline alloy as a thermoelectric material can be improved by adjusting composition and structural quality, as well as by the addition of a small amount of Re, whereas Au implantation is inefficient in that respect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 643: Symposium K – Quasicrystals-Preparation, Properties, and Applications , 2000 , K14.3
Copyright
Copyright © Materials Research Society 2001

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References

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