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Electron Structure and Mechanism of Excitation of the Rare-Earth ions in the III-V Semiconductors
Published online by Cambridge University Press: 21 February 2011
Abstract
The review of results of KPR, ODMR, RBS and PL investigations of the III-V semiconductors doped with rare-earth elements is represented. The possible sites of RE related centers in hostare discussed. The possible mechanism of excitation of intrashell f-f transitions is considered. The simple theoretical model of the substitutional RE center in a binary semiconductors is discussed.
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- Copyright © Materials Research Society 1993
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