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Electron Spin Resonance Evidence for a Localized EP (E’δ-Like) Defect Structure

Published online by Cambridge University Press:  26 February 2011

John F Conley Jr.
Affiliation:
The Pennsylvania State University, Department of Engineering Science and Mechanics, University Park, PA 16802
PM Lenahan
Affiliation:
The Pennsylvania State University, Department of Engineering Science and Mechanics, University Park, PA 16802
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Abstract

We report the first observation of a hydrogen complexed EP (E’δ) center. Comparing EP/H and E’γ/H electron spin resonance spectra, we provide the first strong evidence that EP (E’δ) centers do not have a delocalized structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1. Shaneyfelt, M.R. Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Hughes, H.L., and Sexton, F.W., IEEE Trans. Nuc. Sci. 37, 1632 (1990).Google Scholar
2. Kohler, R.A., Kushner, R.A., and Lee, K.H., IEEE Trans. Nuc. Sci. 35, 1492 (1988).Google Scholar
3. Lenahan, P.M. and Dressendorfer, P.V., IEEE Trans. Nuc. Sci. 30, 4602 (1983), J. Appl. Phys. 55, 3495 (1984).Google Scholar
4. Lipkin, L., Rowan, L., Reisman, A., and Williams, C.K., J. Electrochem. Soc. 138, 2050 (1991).Google Scholar
5. Takahashi, T., Triplett, B.B., Yokogawa, K., and Sugano, T., Appl. Phys. Lett. 51, 1334 (1987).Google Scholar
6. Conley, J.F. and Lenahan, P.M., Appl. Phys. Lett. 62, 40 (1993).Google Scholar
7. Conley, J.F. and Lenahan, P.M., Microelec. Engr. 22, 215 (1993).Google Scholar
8. Conley, J.F. Jr., and Lenahan, P.M., IEEE Trans. Nuc. Sci. 40, 1335 (1993).Google Scholar
9. Conley, J.F. Jr. Lenahan, P.M., Evans, H.L., Lowry, R.K., and Morthorst, T.J., J. Appl. Phys. 76, 2872 (1994).Google Scholar
10. Vanheusden, K. and Stesmans, A., J. Appl. Phys. 74, 275 (1993).Google Scholar
11. Warren, W.L., Shaneyfelt, M.R., Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Devine, R.A.B., Maszara, W.P., and McKitterick, J.B., IEEE Trans. Nuc. Sci. 40, 1755 (1993).Google Scholar
12. Warren, W.L., Shaneyfelt, M.R., Fleetwood, D.M., Schwank, J.R., and Winokur, P.S., IEEE Trans. Nuc. Sci. 41, 1817 (1994).Google Scholar
13. Griscom, D.L. and Friebele, E.J., Phys. Rev. B. 34, 7524 (1986).Google Scholar
14. Conley, J.F. Jr. Lenahan, P.M., and Roitman, P., proceedings INFOS ’91, p. 259 (1991).Google Scholar
15. Conley, J.F. Jr., Lenahan, P.M., Evans, H.L., Lowry, R.K., and Morthorst, T.J., in Materials Reliability in Microelectronics IV, Vol. 138, 1994 MRS Spring Meeting Proc, pp. 3742 (1994).Google Scholar
16. Vitko, J., J. Appl. Phys. 49, 5530 (1978).Google Scholar
17. Tsai, T.E. and Griscom, D.L., J. Noncryst. Sol. 91, 170 (1987).Google Scholar