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Electron Paramagnetic Resonance Study of Low Temperature Molecular Beam Epitaxy Grown GaAs and InP Layers

Published online by Cambridge University Press:  15 February 2011

H. J. von Bardeleben ,
Y. Q. Jia ,
J. P. Hirtz ,
J. C. Garcia ,
M. O. Manasreh ,
C. E. Stutz  and
K. R. Evans
H. J. von Bardeleben
Affiliation:
Groupe de Physique des Solides, Université Paris 7, 2 place Jussieu, 75251 PARIS Cedex France
Y. Q. Jia
Affiliation:
Groupe de Physique des Solides, Université Paris 7, 2 place Jussieu, 75251 PARIS Cedex France
J. P. Hirtz
Affiliation:
THOMSON CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91404 ORSAY France
J. C. Garcia
Affiliation:
THOMSON CSF, Laboratoire Central de Recherches, Domaine de Corbeville, 91404 ORSAY France
M. O. Manasreh
Affiliation:
Electronic Technology Directorate (WL, ELRA), Wright -Patterson Air Force Base, DAYTON, Ohio 45433-6543, USA
C. E. Stutz
Affiliation:
Electronic Technology Directorate (WL, ELRA), Wright -Patterson Air Force Base, DAYTON, Ohio 45433-6543, USA
K. R. Evans
Affiliation:
Electronic Technology Directorate (WL, ELRA), Wright -Patterson Air Force Base, DAYTON, Ohio 45433-6543, USA
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Abstract

The native defects in LTMBE III-V layers have been studied by the electron paramagnetic resonance (EPR) technique for three different systems: GaAs on GaAs, GaAs on Si and InP on InP. The GaAs layers are characterised by high concentrations of ionized arsenic antisite defects(1019 cm −3), with properties similar to those of the native AsGa in amorphous GaAs. Their variation with the growth temperature, layer thickness and thermal annealings has been assessed.The results are independant on the nature of the substrate, GaAs or Si. Inspite of a 1% phosphorous excess no phosphorous antisites could be detected in the as-grown, undoped or Be doped InP layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 69
Copyright
Copyright © Materials Research Society 1992

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References

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