No CrossRef data available.
Article contents
Electron Irradiation of 4H SiC by TEM: An Optical Study
Published online by Cambridge University Press: 21 March 2011
Abstract
An intrinsic defect spectrum, commonly observed after ion-implantation, electron, proton or neutron irradiation and even after SIMS measurements is investigated using photoluminescence techniques. The spectrum is associated with carbon related isoelec-tronic centers having a pseudodonor like behaviour. Vacancy-interstitial pair complexes are tentatively suggested as the defect centers responsible for this intrinsic spectrum.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2001