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Electron Irradiation Induced Crystallization of Amorphous Al2O3 Films on Silicon Substrates

Published online by Cambridge University Press:  21 February 2011

J. Liu ,
C. J. Barbero ,
J. W. Corbett ,
K. Rajan  and
H. Leary
J. Liu
Affiliation:
Department of Physics, SUNY at Albany, Albany, NY 12222
C. J. Barbero
Affiliation:
Department of Physics, SUNY at Albany, Albany, NY 12222
J. W. Corbett
Affiliation:
Department of Physics, SUNY at Albany, Albany, NY 12222
K. Rajan
Affiliation:
Material Engineering Department, NY State Center for Advanced Technology in Automation and Robotics, Rensselaer Polytechnic Institute, Troy, NY 12180
H. Leary
Affiliation:
IBM Corporation, East Fishkill, NY 12533
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Abstract

An in situ study of electron beam irradiation induced amorphous–to–crystalline transformation of Al2O3 films on silicon substrates has been carried out using transmission electron microscopy. Trigonal α–Al2O3 crystallites can be observed for electron beam dose rates larger than 10 mA/cm2. It is found that the nucleation and growth processes dominate near the Al2O3–Si interface. The possible effect of the silicon substrate on the growth of Al2O3 crystallites is considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 239
Copyright
Copyright © Materials Research Society 1993

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References

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