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Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

Published online by Cambridge University Press:  01 February 2011

Yumei Xing ,
Jihua Zhang ,
Yuehui Yu ,
Zhaorui Song  and
Dashen Shen
Yumei Xing
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P.R.China.
Jihua Zhang
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P.R.China.
Yuehui Yu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P.R.China.
Zhaorui Song
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P.R.China.
Dashen Shen
Affiliation:
Department of Electrical and Computer Engineering, University of Alabama in Huntsville, Huntsville, AL 35899, U.S.A.
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Abstract

High intensity electron field emissions were obtained from SiC/Si heterostructures formed by high temperature carbon implantation into silicon and subsequently etching of the top silicon layer. Implantation processes were performed at 700 °C with a dose of 3.0 to 8.0 x 1017 ions/cm2. Post-implantation annealing in argon at 1250 °C for 5h was done for partial samples. β-SiC precipitates were easily formed and embedded in silicon at the interface of SiC/Si heterostructures during high temperature carbon implantation for all samples. The densely distributed small protrusions led to efficient electron emission. Implantation dose scarcely impacted the electron emission characteristics when it reached to a definite value. After annealing, the density of protrusions at the interface of SiC/Si heterostructures became smaller since β-SiC precipitates were grown into larger sizes, which caused to a relatively inefficient electron emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A6.7
Copyright
Copyright © Materials Research Society 2005

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