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Electron Field Emission from GaN Nanotip Pyramids

Published online by Cambridge University Press:  01 February 2011

Hock M. Ng ,
Jonathan Shaw ,
Aref Chowdhury  and
Nils G. Weimann
Hock M. Ng
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ, U.S.A.
Jonathan Shaw
Affiliation:
Naval Research Laboratory, Washington DC, U.S.A.
Aref Chowdhury
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ, U.S.A.
Nils G. Weimann
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ, U.S.A.
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Abstract

Electron field emission was measured from GaN nanotip pyramids formed by polarity-selective chemical etching in KOH solution. The GaN samples were grown by plasma-assisted molecular beam epitaxy and consisted of regions of Ga- and N-polar GaN grown at the same time. The pyramids were formed only in the N-polar regions and have extremely sharp tips with diameters estimated to be less than 20 nm. Field emission measurements showed a characteristic Fowler-Nordheim behavior. The average turn-on field was 1.6 V/μm with a corresponding normalized field enhancement factor of about 1500.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y4.2
Copyright
Copyright © Materials Research Society 2004

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References

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