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Electron Density Effects in the Modulation Spectroscopy of Strained and Lattice-Matched InGaAs/InAlAs/InP HEMTs.

Published online by Cambridge University Press:  15 February 2011

A. Dimoulas ,
J. Davidow ,
K. P. Giapis ,
A. Georgakilas ,
G. Halkias  and
N. Kornelios
A. Dimoulas
Affiliation:
California Institute of Technology, Chemical Engineering 210–41, Pasadena, CA 91125
J. Davidow
Affiliation:
California Institute of Technology, Chemical Engineering 210–41, Pasadena, CA 91125
K. P. Giapis
Affiliation:
California Institute of Technology, Chemical Engineering 210–41, Pasadena, CA 91125
A. Georgakilas
Affiliation:
Foundation for Research and Technology-Hellas P.O. Box 1527, Heraklion 711 10, Greece
G. Halkias
Affiliation:
Foundation for Research and Technology-Hellas P.O. Box 1527, Heraklion 711 10, Greece
N. Kornelios
Affiliation:
Foundation for Research and Technology-Hellas P.O. Box 1527, Heraklion 711 10, Greece
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Abstract

The effects of the channel electron density on the interband optical transitions of strained (x = 0.6 and 0.65) and lattice-matched (x = 0.53) lnxGa1−xAs/In0.52Al0.48As/InP high electron mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate estimation of the electron densities occupying each one of the first two subbands. It was found necessary to include the modulation of the phase-space filling in the analysis of the spectra, especially for the samples with a high electron density, in which case this mechanism becomes dominant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 301
Copyright
Copyright © Materials Research Society 1996

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