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Electron Cyclotron Resonance Hydrogen Plasma Induced Defects in Thermally Grown and Spuiter Deposited SiO2

Published online by Cambridge University Press:  16 February 2011

W. L. Hallett ,
R. A. Ditizio  and
S. J. Fonash
W. L. Hallett
Affiliation:
The Center For Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
R. A. Ditizio
Affiliation:
The Center For Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
S. J. Fonash
Affiliation:
The Center For Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

In this study we show that upon exposure to electron cyclotron resonance hydrogen plasmas, both thermally grown and sputter deposited oxides are degraded, resulting in large shifts of flat band voltage, and increases in fixed charge and interface state density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 127
Copyright
Copyright © Materials Research Society 1991

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References

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