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Electron Channeling Analysis of Strained Iron Aluminide Films

Published online by Cambridge University Press:  22 February 2011

R. R. Keller ,
J. E. Angelo ,
A. M. Wowchak ,
P. I. Cohen  and
W. W. Gerberich
R. R. Keller
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
J. E. Angelo
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. M. Wowchak
Affiliation:
Dept. of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
P. I. Cohen
Affiliation:
Dept. of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
W. W. Gerberich
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
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Abstract

Relaxation modeling for strained epitaxial films depends strongly on the acquisition of accurate structural information. Electron channeling provides such information from bulk samples in a scanning electron microscope and hence is not subject to thin specimen artifacts. Electron channeling patterns (ECPs) were obtained from thin (∼100Å), partially relaxed iron aluminide films grown by MBE on thick (∼1mm) AlAs/GaAs (100) substrates. These systems exhibited low critical thicknesses as determined by in-situ reflection high energy electron diffraction (RHEED). Variation of SEM accelerating voltage provided ECPs from depths ranging from film only to film + substrate. High diffraction order lines were analyzed kinematically to determine lattice parameters in the strained film. ECP and RHEED indicated an elastic strain in the film of approximately 1.2%. A linear elastic finite element approach was then used to estimate the degree of strain redistribution into the substrate in a thinned TEM specimen. Results indicated that reducing the substrate thickness to below ten times the film thickness can decrease the elastic strain in the film by 0.5%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 205
Copyright
Copyright © Materials Research Society 1991

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References

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