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Electromigration of Electroplated Gold Interconnects

Published online by Cambridge University Press:  01 February 2011

Steve Kilgore ,
Craig Gaw ,
Haldane Henry ,
Darrell Hill  and
Dieter Schroder
Steve Kilgore
Affiliation:
Intrinsic Reliability Engineering Laboratory, Freescale Semiconductor, Inc. Tempe, AZ 85284, U.S.A.
Craig Gaw
Affiliation:
Intrinsic Reliability Engineering Laboratory, Freescale Semiconductor, Inc. Tempe, AZ 85284, U.S.A.
Haldane Henry
Affiliation:
Intrinsic Reliability Engineering Laboratory, Freescale Semiconductor, Inc. Tempe, AZ 85284, U.S.A.
Darrell Hill
Affiliation:
Intrinsic Reliability Engineering Laboratory, Freescale Semiconductor, Inc. Tempe, AZ 85284, U.S.A.
Dieter Schroder
Affiliation:
Intrinsic Reliability Engineering Laboratory, Freescale Semiconductor, Inc. Tempe, AZ 85284, U.S.A.
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Abstract

Electromigration tests were performed on passivated electroplated Au four terminal Kelvin line structures using the conventional in situ resistance monitoring technique. The stress conditions were a current density of 2.0 MA/cm2 with ambient temperatures ranging from 325°C to 375°C. The temperature coefficients of resistance (TCR) values were measured prior to current stressing to calculate the Joule heated film temperatures. The times to failure (lifetimes) for the Au line structures were considered as a 50% ΔR/R0 change. The median time to failure (t50%) was plotted against the inverse film temperature to determine the activation energy value as 0.59 ± 0.09 eV. Failure analysis of void location and suggested diffusion mechanism will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B8.30
Copyright
Copyright © Materials Research Society 2005

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