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Electromigration Lifetimes of Single Crystal Aluminum Lines with Different Crystallographic Orientations

Published online by Cambridge University Press:  22 February 2011

Y.-C. Joo  and
C.V. Thompson
Y.-C. Joo
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
C.V. Thompson
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Near-bamboo interconnects are susceptible to failure either at polygranular clusters or within bamboo grains (transgranular failure). Polygranular failure mechanisms are often dominant in lines with near-bamboo structures at test conditions, but at service conditions, transgranular failure mechanisms are expected to dominate. In order to study the temperature and current density dependence as well as the crystallographic dependence of these transgranular failure mechanisms, it is necessary to isolate them from other mechanisms. To do this, we have studied single crystal Al lines on oxidized silicon.

We have tested lifetimes of passivated and unpassivated Al single crystal lines with various textures. In both passivated and unpassivated lines, the median time to failure, t50, was found to be texture-dependent, with t50(l11) > t50(133) > t50(110), and with t50(111) ∼ 10×t50(110). The activation energy for failure for both passivated and unpassivated (110) single crystal lines was about 1 eV. This value differs from that of aluminum bulk diffusion (1.4 eV), suggesting that interface diffusion is the dominant diffusion mechanism in these lines, and perhaps in bamboo regions of near-bamboo lines as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 319
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Walton, D.T., Frost, H.J., and Thompson, C.V., Appl. Phys. Lett. 61, 40 (1992).Google Scholar
2. Sanchez, J.E. Jr, McKnelly, L.T. and Morris, J.W. Jr, J. Electron. Mater. 19, 1213 (1990).Google Scholar
3. Sanchez, J.E. Jr, Kraft, O. and Arzt, E., Appl. Phys. Lett. 61, 3121 (1992).Google Scholar
4. Atakov, E., Clement, J., and Minor, B., MRS Symp. Proc. 309, 133 (1993).Google Scholar
5. Rose, J.H., Appl. Phys. Letts. 61, 2170 (1992).Google Scholar
6. Joo, Y.-C. and Thompson, C. V., MRS Symp. Proc. 309, 351 (1993).Google Scholar
7. Blech, I. and Herring, C., Appl. Phys. Lett. 29, 131 (1976).Google Scholar
8. Kinsbron, E., Appl. Phys. Lett. 36, 968 (1980).Google Scholar
9. Walton, D., Frost, H., and Thompson, C., MRS Symp. Proc. 225, 219 (1991).Google Scholar
10. Blech, I., J Appl. Phys. 47, 1203 (1976).Google Scholar
11. Black, J., IEEE Trans. Electron. Devices ED–16, 338 (1969).Google Scholar
12. Shatzkes, M. and Lloyd, J., J. AppL Phys. 59, 3890 (1986).Google Scholar
13. Korhonen, M.A., Borgesen, P., Tu, K.-N., and Li, C.-Y., J. Appl. Phys. 73, 3790 (1993).Google Scholar
14. Thompson, C.V. and Cho, J., IEEE Electron Dev. Lett. 7, 667 (1986).Google Scholar
15. Vaidya, S., Sheng, T.T., and Sinha, A.K., Appl. Phys. Lett. 36, 464 (1980).Google Scholar
16. Knorr, D.B., MRS Symp. Proc. 309, 75 (1993).Google Scholar
17. Attardo, M.J. and Rosenberg, R., J. Appl. Phys. 41, 2381 (1970).Google Scholar
18. Spokas, J. and Slichter, C., Phys. Rev. 113, 1462 (1959).Google Scholar
19. Lundy, T. and Murdock, J., J. Appl. Phys. 33, 1671 (1962)Google Scholar
20. Sorbo, W. De and Turnbell, D., Phys. Rev. 115, 560 (1959).Google Scholar
21. Cho, J., Ph.D. Thesis, MIT Dept. of Materials Science and Engineering (1990).Google Scholar