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Electromigration in Thin Metal Films in the Presence of Two Stress-Relaxation Mechanisms

Published online by Cambridge University Press:  15 February 2011

A. Katsman  and
L. Levin
A. Katsman
Affiliation:
Department of Materials Engineering, Technion, Haifa 32000,Israel
L. Levin
Affiliation:
Department of Materials Engineering, Technion, Haifa 32000,Israel
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Abstract

Kinetics of mass transfer in thin metal films during electromigration was analyzed as a function of the generated internal stress. Stress evolution was considered for the case when two different stress relaxation mechanisms can operate simultaneously near the anode end of the strip: thresholdless diffusional creep through a fixed aperture, and diffusional creep with a threshold stress, σt, through the same aperture. Stress distribution and electromigration rate were found as explicit functions of the film length, the aperture size, and the current density. The apparent threshold length was analyzed. It was shown that an apparent threshold product can grow with the current density, in agreement with the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 167
Copyright
Copyright © Materials Research Society 1996

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References

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