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Electromigration in Al And Al-Alloy Thin-Film Conductors

Published online by Cambridge University Press:  22 February 2011

R.W. Pasco ,
L.E. Felton  and
J.A. Schwarz
R.W. Pasco
Affiliation:
International Business Machines Corporation, Hopewell Junction, NY 12533
L.E. Felton
Affiliation:
Syracuse University, Dept. Chem. Eng. & Mat'1. Sci., Syracuse, NY 13210
J.A. Schwarz
Affiliation:
Syracuse University, Dept. Chem. Eng. & Mat'1. Sci., Syracuse, NY 13210
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Abstract

Temperature-ramp Resistance Analysis to Characterize Electromigration (TRACE) has been applied to thin-film Al and Al-alloy conductors. Results have yielded activation energies in agreement with literature values. The TRACE technique has been used to determine the effect of H2 on the kinetics of electromigration damage (EMD) for both Al and Al-2%Cu thin-film conductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 581
Copyright
Copyright © Materials Research Society 1984

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References

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