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Electromigration and 1/ƒ Noise in Single-Crystalline, Bamboo and Polycrystalline Al Lines

Published online by Cambridge University Press:  10 February 2011

Marc J.C. Van Den Homberg ,
P.F.A. Alkemade ,
A. H. Verbruggen ,
A. G. Dirks ,
E. Ochs  and
S. Radelaar
Marc J.C. Van Den Homberg
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
P.F.A. Alkemade
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
A. H. Verbruggen
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
A. G. Dirks
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
E. Ochs
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstr. 1, D-70569, Stuttgart, Germany
S. Radelaar
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
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Abstract

The relation between electromigration and microstructure for three types of Al lines with different microstructures has been studied. The lines were made by recrystallization of Al in a SiO2 groove pattern. They were either truly bamboo with grains of on average 3 μm long or distorted (i.e. with dislocations) single-crystals. In addition, conventional, polycrystalline Al lines with grains of on average 230 nm were made. The lines were lifetime-tested (200 °C,j=2, 5 and 8 MA/cm2) and subjected to l/f noise measurements (from 200 to 500 K).

The bamboo and single-crystalline Al lines showed the same, although weak, 1/ƒ noise. This observation demonstrates that other mechanisms than thermal motion of atoms at grain boundaries can cause noise. It is suggested that dislocations are the sources for noise in our samples. The measured activation energy (0.8 eV) is in agreement with the activation energy for pipe diffusion along dislocation lines.

The lifetime-tests showed significantly higher times to failure for the single-crystalline and bamboo lines as compared to polycrystalline lines. Preliminary results indicate slightly higher lifetimes for the bamboo than for the single-crystalline lines. It is concluded that interface diffusion is the main mechanism for electromigration in truly bamboo or single-crystalline lines. Our measurements demonstrated that dislocations are important in the formation of l/ƒ noise and interfaces in the formation of electromigration damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 211
Copyright
Copyright © Materials Research Society 1997

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References

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