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Electromechanical Properties of Lead-Based Ferroelectric Thin Films
Published online by Cambridge University Press: 10 February 2011
Abstract
Piezoelectric properties of Pb(Zr,Ti)O3 (PZT) and PbMg1/3Nb2/3O3-PbTiO3 (PMN-PT) films are investigated by interferometric technique combined with conventional dielectric and polarization measurements. It is shown that the piezoelectric d33 coefficient of both materials can be expressed based on their polarization and dielectric constant values using an equation for the electrostriction biased by the polarization. The obtained values of electrostriction coefficients are nearly field-independent and significantly smaller than in bulk materials of the same composition. Polarization offset is observed in PZT films subjected to bipolar fatigue, UV illumination and poling at high temperature, and is explained based on the pinning of ferroelectric domains in preferred orientations. The piezoelectric properties of rhombohedral PZT films are found to depend on their texture. The highest piezoelectric coefficient is observed in (100) oriented films, which have smaller polarization as compared to films having (111) preferred orientation. This difference is explained by the different values of electrostriction coefficients in materials with different textures.
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- Copyright © Materials Research Society 1999
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