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Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Quantum Wells

Published online by Cambridge University Press:  15 February 2011

A.E. Yunovich ,
V.E. Kudryashov ,
A..N. Turkin ,
A.N. Kovalev  and
F.I. Manyakhin
A.E. Yunovich
Affiliation:
M. V. Lomonosov Moscow State University, Department of Physics E-mail:, [email protected]
V.E. Kudryashov
Affiliation:
M. V. Lomonosov Moscow State University, Department of Physics E-mail:, [email protected]
A..N. Turkin
Affiliation:
M. V. Lomonosov Moscow State University, Department of Physics E-mail:, [email protected]
A.N. Kovalev
Affiliation:
Moscow Institute of Steel and Alloys, Moscow, Russia. E-mail:, [email protected]
F.I. Manyakhin
Affiliation:
Moscow Institute of Steel and Alloys, Moscow, Russia. E-mail:, [email protected]
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Abstract

Electroluminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with single and multiple quantum wells (QWs) are analyzed by models of radiative recombination in 2D-structures with band tails. Equations of the model fit spectra quite good in a wide range of currents. Parameters of the fit are discussed and compared for single and multiple QWs. Tunnel effects play a sufficient role in blue LEDs with single QWs at low currents; they can be neglected in LEDs with multiple QWs. A new spectral band was detected at the high energy side of the spectra of green LEDs with multiple QWs; it is attributed with large scale inhomogenities of In distribution in InGaN QWs.)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.29
Copyright
Copyright © Materials Research Society 1999

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References

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