Article contents
Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Quantum Wells
Published online by Cambridge University Press: 15 February 2011
Abstract
Electroluminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with single and multiple quantum wells (QWs) are analyzed by models of radiative recombination in 2D-structures with band tails. Equations of the model fit spectra quite good in a wide range of currents. Parameters of the fit are discussed and compared for single and multiple QWs. Tunnel effects play a sufficient role in blue LEDs with single QWs at low currents; they can be neglected in LEDs with multiple QWs. A new spectral band was detected at the high energy side of the spectra of green LEDs with multiple QWs; it is attributed with large scale inhomogenities of In distribution in InGaN QWs.)
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1999
References
- 3
- Cited by