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Electroluminescence as a Function of Electric Field and Temperature in Amorphous Silicon-Carbon Based p-i-n Structures
Published online by Cambridge University Press: 28 February 2011
Abstract
Electroluminescence at room temperature with a peak energy between 1.6 and 1.8 eV is observed in a-SiC:H p-i-n devices containing thin injection layers of high bandgap a-SiC:H. The temperature dependence of electroluminescence between 80 K and 320 K is much weaker than expected from the photoluminescence signal. No shift of the electroluminescence spectrum is observed up to voltages of 20 V applied across a 110 nm thick device. The results are compared to well-known features of electroluminescence in a-Si:H devices.
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- Copyright © Materials Research Society 1993